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1.專利、商標、著作或其他智慧財產權之內容:

NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND WRITING METHOD THEREOF

2.專利、商標、著作或其他智慧財產權之取得日期:104/06/01

3.取得專利、商標、著作或其他智慧財產權之成本:NT$656,850

4.其他應敘明事項:

A non-volatile semiconductor memory deviceutilized to implement the writing

of data by adding a predetermined voltage thereto forassigning a word line

to a non-volatile memory cell includes a control processorgenerating and

outputting control data implementing a program code for writing data

including a word line assignment command and voltage source assignment

data, a writing controller decoding the control data and generating a

control signal of the word line assignment command and a control signal

of the voltage source assignment data, a voltage generation circuit

generating several voltages for writing data, and a switch circuit

selecting a voltage, corresponding to voltage source assignment data,

among several voltages,according to the control signal of the word line

assignment command and the control signal of the voltage source assignment

data and outputting the selected voltage to the word line corresponding to

the word line assignment command.

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