| 1.專利、商標、著作或其他智慧財產權之內容:NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND WRITING METHOD THEREOF2.專利、商標、著作或其他智慧財產權之取得日期:104/06/013.取得專利、商標、著作或其他智慧財產權之成本:NT$656,8504.其他應敘明事項:A non-volatile semiconductor memory deviceutilized to implement the writingof data by adding a predetermined voltage thereto forassigning a word lineto a non-volatile memory cell includes a control processorgenerating andoutputting control data implementing a program code for writing dataincluding a word line assignment command and voltage source assignmentdata, a writing controller decoding the control data and generating acontrol signal of the word line assignment command and a control signalof the voltage source assignment data, a voltage generation circuitgenerating several voltages for writing data, and a switch circuitselecting a voltage, corresponding to voltage source assignment data,among several voltages,according to the control signal of the word lineassignment command and the control signal of the voltage source assignmentdata and outputting the selected voltage to the word line corresponding tothe word line assignment command.<摘錄公開資訊觀測站> |
|
