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1.專利、商標、著作或其他智慧財產權之內容:

NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND

READING-OUT METHOD THEREFORE

2.專利、商標、著作或其他智慧財產權之取得日期:103/08/18

3.取得專利、商標、著作或其他智慧財產權之成本:NT$279,099

4.其他應敘明事項:

In a non-volatile semiconductor memory device outputting a data value

determined according to a majority rule by reading-out data from each

memory cell for an odd number of times, an odd number of latch circuits,

each of which comprises a capacitor for selectively holding a voltage of

each of the data read-out from the memory cell for the odd number of times

in sequence, is provided. The capacitor of each latch circuit is connected

in parallel after the capacitor of each latch circuit selectively holds the

voltage of each of the data read-out from the memory cell for the odd number

of times in sequence, and the data value is determined by the majority rule

based on a composite voltage of the capacitor of each latch circuit

connected in parallel.

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